absolute maximum ratings t c =25c unless otherwise specified electrical characteristics t c =25c unless otherwise specified symbol parameter test conditions values unit v r maximum d.c. reverse voltage 300 v v rrm maximum repetitive re verse voltage 300 v i f(av) average forward current t c =110c, per diode 30 a t c =110c, per package 60 a i f(rms) rms forward current t c =110c, per diode 42 a i fsm non-repetitive surge forward current t j =45c, t=10ms, 50hz, sine 480 a p d power dissipation 156 w t j junction temperature -55to +150 c t stg storage temperature range -55 to +150 c torque module-to-sink recommended m3 1.1 nm r th(j-c) thermal resistance junction-to-case, per diode 0.8 c /w weight 6 g symbol parameter test conditions min. typ. max. unit i rm reverse leakage current v r =300v -- -- 10 a v r =300v, t j =125c -- -- 10 ma v f forward voltage i f =30a -- 1.25 1.8 v i f =30a, t j =125c -- 1.12 -- v t rr reverse recovery time i f =1a, v r =30v, di f /dt=-200a/ s -- 22 -- ns t rr reverse recovery time v r =150v, i f =30a di f /dt=-200a/ s, t j =25c -- 35 -- ns i rrm max. reverse recovery current -- 2.5 -- a t rr reverse recovery time v r =150v, i f =30a di f /dt=-200a/ s, t j =125c -- 70 -- ns i rrm max. reverse recovery current -- 6.8 -- a ? FF60UP30DN pb free plating product FF60UP30DN 60.0 ampere,300 volt common cathode fast recovery epitaxial diode pb ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature FF60UP30DN using the lastest fred fab process(planar passivation chip) with ultrafast and soft recovery characteristic. ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 rev.05 to-3pb/to-3pn internal configuration cathode(bottom side metal heatsink) cathode anode base backside ? ? ? ? ? ? ? ? ? ? anode
i f (a) v f v fig1. forward voltage drop vs forward current t j =125c t j =25c 60 50 40 30 20 10 0 0 0.3 0.6 1.2 1.5 1.8 di f /dt a/ s fig2. reverse recovery time vs di f /dt 1000 800 600 400 200 0 0 20 t r r (ns) 40 60 80 100 v r =150v t j =125c i f =60 a i f =15 a i f =30 a i rrm (a) di f /dt a/ s fig3. reverse recovery current vs di f /dt 24 20 12 8 4 0 0 200 400 600 800 1000 di f /dt a/ s fig4. reverse recovery charge vs di f /dt 1000 800 600 400 200 0 0 100 q r r (nc) 400 500 600 v r =150v t j =125c i f =60a i f =15a i f =30 a v r =150v t j =125c i f =60a i f =30 a i f =15a k f 0 0.2 0.4 1.2 0.6 10 1 10 -1 10 -2 10 -3 z thjc ( k/w ) 0.8 i rrm q r r t r r t j (c) fig5. dynamic parameters vs junction temperature 0 25 50 100 150 1 10 -1 10 -2 10 -3 10 -4 rectangular pulse duration (seconds) fig6. transient thermal impedance 75 125 0.9 1 200 300 duty 0.5 0.2 0.1 0.05 single pulse 16 ? FF60UP30DN ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 rev.05
fig7. diode reverse recovery test circuit and waveform i f di f /dt t rr i rrm q rr 0.25 i rrm 0.9 i rrm dimensions in millimeters fig8. package outline ? FF60UP30DN ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 rev.05
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